Sample 33

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
10	6	Si wafer - not bonded	50	0	5.0	40	500	20	10	33.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 8.810 um
Calculated remaining resist as 8.36um, indicating an erosion of 0.38um in 10 minutes of etching
This equates to an erosion rate of 38 nm/min
The etch depth of 0.45um in 10 mins indicates an etch rate of 45.0nm/min
The selectivity is therefore 1.18:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	8.810500
Remaining resist (um)	8.360500
Semiconductor etched(um)	0.450000
Etch rate (nm/min)	45.000000
Erosion rate (nm/min)	38.050000
Selectivity	1.182654